Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots
Identifieur interne : 00C543 ( Main/Repository ); précédent : 00C542; suivant : 00C544Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots
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Abstract
Using femtosecond three-pulse pump-probe spectroscopy, we investigated the transparency condition for the ground and first excited states in self-organized In0.4Ga0.6As quantum dots at different temperatures and wavelengths. The temperature-dependent behavior of the transparency condition is consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir. The twofold spatial degeneracy of the first excited state and the temperature dependence of the thermal equilibrium processes were experimentally observed. © 2003 American Institute of Physics.
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Norris</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Ultrafast Optical Science, Department of Electrical Engineering and Computer Science, The University of Michigan, 2200 Bonisteel Boulevard, Ann Arbor, Michigan 48109-2099</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Center for Ultrafast Optical Science, Department of Electrical Engineering and Computer Science, The University of Michigan, 2200 Bonisteel Boulevard, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Ghosh, S" uniqKey="Ghosh S">S. Ghosh</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Singh, J" uniqKey="Singh J">J. Singh</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Bhattacharya, P" uniqKey="Bhattacharya P">P. Bhattacharya</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0151478</idno><date when="2003-03-24">2003-03-24</date><idno type="stanalyst">PASCAL 03-0151478 AIP</idno><idno type="RBID">Pascal:03-0151478</idno><idno type="wicri:Area/Main/Corpus">00D986</idno><idno type="wicri:Area/Main/Repository">00C543</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electronic density of states</term><term>Excited states</term><term>Experimental study</term><term>Gallium arsenides</term><term>Ground states</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Self-assembly</term><term>Semiconductor quantum dots</term><term>Time resolved spectra</term><term>Transparency</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7321L</term><term>7867H</term><term>7847</term><term>7820C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Autoassemblage</term><term>Spectre résolution temporelle</term><term>Transparence</term><term>Densité état électron</term><term>Etat fondamental</term><term>Etat excité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using femtosecond three-pulse pump-probe spectroscopy, we investigated the transparency condition for the ground and first excited states in self-organized In<sub>0.4</sub>Ga<sub>0.6</sub>As quantum dots at different temperatures and wavelengths. The temperature-dependent behavior of the transparency condition is consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir. The twofold spatial degeneracy of the first excited state and the temperature dependence of the thermal equilibrium processes were experimentally observed. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>NORRIS (T. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0151478</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Using femtosecond three-pulse pump-probe spectroscopy, we investigated the transparency condition for the ground and first excited states in self-organized In<sub>0.4</sub>Ga<sub>0.6</sub>As quantum dots at different temperatures and wavelengths. The temperature-dependent behavior of the transparency condition is consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir. 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